SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage
APPLICATIONS
·Designed for medium-to-high voltage
Inverters,converters,regulators and
switching circuits
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
DESCRIPTION
MJ423
Fig.1 simplified outline (TO-3) and symbol
Collector
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
400
325
5
10
2
125
-65~150
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.0
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
MJ423
SYMBOL
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A ;I
B
=0
325
V
V
CE
(sat)
V
BE
(sat)
I
CEX
Collector-emitter saturation voltage
I
C
=1A; I
B
=0.1A
0.8
V
Base-emitter saturation voltage
I
C
=1A; I
B
=0.1A
V
CE
=400V; V
EB(Off)
=1.5V
T
C
=125
V
EB
=5V; I
C
=0
1.25
0.25
0.5
5.0
V
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE-1
DC current gain
I
C
=1A ; V
CE
=5V
30
90
h
FE-2
DC current gain
I
C
=2.5A ; V
CE
=5V
10
f
T
Transition frequency
I
C
=0.2A ; V
CE
=10V;f=1.0MHz
2.5
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJ423
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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