SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC867
DESCRIPTION
·With TO-66 package
·High collector-base breakdown voltage
:V
CBO
=400V(min)
APPLICATIONS
·For high voltage and switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
? )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25?
CONDITIONS
Open emitter
Open base
Open collector
VALUE
400
150
5
1
2
23
150
-55~150
UNIT
V
V
V
A
A
W
?
?
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC867
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=30mA; I
B
=0
150
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=1mA; I
C
=0
5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=1A; I
B
=0.2 A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=1A; I
B
=0.2 A
1.5
V
I
CBO
Collector cut-off current
V
CB
=400V;I
E
=0
100
µA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
100
µA
h
FE
DC current gain
I
C
=0.1A ; V
CE
=3V
50
f
T
Transition frequency
I
C
=0.2A ; V
CE
=10V
8
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC867
Fig.2 outline dimensions
3
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