SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1271 2SD1271A
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SB946/946A
·Low collector saturation voltage
·Good linearity of h
FE
·Large collector current I
C
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Fig.1 simplified outline (TO-220Fa) and symbol
Emitter
ABSOLUTE MAXIMUM RATINGS AT Ta=25
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SD1271
2SD1271A
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
T
C
=25
Collector power dissipation
T
a
=25
Junction temperature
Storage temperature
2
150
-55~150
2SD1271
2SD1271A
Open collector
Open base
100
7
7
15
40
w
V
A
A
CONDITIONS
Open emitter
150
80
V
VALUE
130
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SD1271
I
C
=10mA , I
B
=0
2SD1271A
I
C
=5A ;I
B
=0.25A
I
C
=5A ;I
B
=0.25A
V
CB
=100V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=2V
I
C
=3A ; V
CE
=2V
I
C
=0.5A ; V
CE
=10V
CONDITIONS
SYMBOL
2SD1271 2SD1271A
MIN
80
TYP.
MAX
UNIT
V
CEO
Collector-emitter
voltage
V
100
0.5
1.5
10
50
45
60
30
260
MHz
V
V
µA
µA
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=3A ;I
B1
=-I
B2
=0.3A
V
CC
=50V
0.5
1.5
0.1
µs
µs
µs
h
FE-2
Classifications
R
60-120
Q
90-180
P
130-260
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1271 2SD1271A
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1271 2SD1271A
4
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1271 2SD1271A
5