SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1276 2SD1276A
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SB950
/950A
·High DC current gain
·High-speed switching
APPLICATIONS
·For power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25
)
SYMBOL
PARAMETER
2SD1276
V
CBO
Collector-base voltage
2SD1276A
2SD1276
V
CEO
Collector-emitter voltage
2SD1276A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
Open collector
Open base
80
5
4
8
40
W
V
A
A
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1276 2SD1276A
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter
breakdown voltage
2SD1276
I
C
=30mA , I
B
=0
2SD1276A
I
C
=3A ;I
B
=12mA
I
C
=5A ;I
B
=20mA
V
CE
=3V; I
C
=3A
2SD1276
2SD1276A
2SD1276
2SD1276A
V
CB
=60V ;I
E
=0
0.2
V
CB
=80V; I
E
=0
V
CE
=30V; I
B
=0
0.5
V
CE
=40V; I
B
=0
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=0.5V
I
C
=3A ; V
CE
=3V
I
C
=0.5A; V
CE
=10V;f=1MHz
1000
2000
20
10000
MHz
2
mA
mA
mA
80
2
4
2.5
V
V
V
CONDITIONS
MIN
60
V
TYP.
MAX
UNIT
SYMBOL
V
(BR)CEO
V
CEsat-1
V
CEsat-
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector
cut-off current
I
CBO
I
CEO
Collector
cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=2A ;I
B1
=8mA
I
B2
=-8mA;V
CC
=50V
0.5
4
1
µs
µs
µs
h
FE-2
Classifications
Q
2000-5000
R
4000-10000
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1276 2SD1276A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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