SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1277 2SD1277A
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SB951
/951A
·High DC current gain
·High-speed switching
APPLICATIONS
·For medium speed power switching
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25
)
SYMBOL
PARAMETER
2SD1277
V
CBO
Collector-base voltage
2SD1277A
2SD1277
V
CEO
Collector-emitter voltage
2SD1277A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
Open collector
Open base
80
7
8
12
45
W
V
A
A
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1277 2SD1277A
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SD1277
I
C
=30mA , I
B
=0
2SD1277A
I
C
=4A; I
B
=8mA
I
C
=4A ;I
B
=8mA
V
CB
=60V ;I
E
=0
0.1
2SD1277A
V
CB
=80V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=8A ; V
CE
=3V
I
C
=4A ; V
CE
=3V
I
C
=0.5A; V
CE
=10V;f=1MHz
500
2000
20
10000
MHz
2
mA
mA
80
1.5
2
V
V
CONDITIONS
MIN
60
V
TYP.
MAX
UNIT
SYMBOL
V
(BR)CEO
Collector-emitter
breakdown voltage
V
CEsat
V
BEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector
cut-off current
2SD1277
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=4A ;I
B1
=8mA
I
B2
=-8mA;V
CC
=50V
0.5
4.0
1.0
µs
µs
µs
h
FE-2
Classifications
Q
2000-5000
R
4000-10000
2
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