SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1344
DESCRIPTION
·With TO-3 package
·High voltage
·Built-in damper diode
APPLICATIONS
·For color TV horizontal deflection
output applications
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
1500
600
5
6
50
150
-40~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
DC current gain
DC current gain
Diode forward voltage
CONDITIONS
I
C
=100m A;I
B
=0
I
E
=200m A;I
C
=0
I
C
=4A;I
B
=0.8 A
I
C
=4A;I
B
=0.8 A
V
CB
=800V;I
E
=0
I
C
=0.5A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
F
=4A
10
5
MIN
600
5
2SD1344
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE-1
h
FE-2
V
F
TYP.
MAX
UNIT
V
V
5.0
1.5
10
V
V
µA
2.0
V
2