SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1406
·
DESCRIPTION
·With TO-220Fa package
·Collector power dissipation
:P
C
=25W@T
C
=25
·Low collector saturation voltage
·Complement to type 2SB1015
APPLICATIONS
·For audio frequency power
amplifier applications
PINNING
PIN
1
2
3
Base
Collector
DESCRIPTION
Fig.1 simplified outline (TO-220Fa) and symbol
Emitter
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
60
60
7
3
0.5
2.0
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=50mA; I
B
=0
I
C
=3A; I
B
=0.3A
I
C
=0.5A ; V
CE
=5V
V
CB
=60V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=0.5A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=0.5A; V
CE
=5V
I
E
=0 ;f=1MHz ; V
CB
=10V
60
20
MIN
60
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
2SD1406
TYP.
MAX
UNIT
V
0.25
0.7
1.0
1.0
100
100
300
V
V
µA
µA
3
70
MHz
pF
Switching times
t
on
t
s
t
f
Trun-on time
Storage time
Fall time
R
L
=15A;V
CC
=30V
I
B1
=-I
B2
=0.2A
0.8
1.5
0.8
µs
µs
µs
h
FE-1
Classifications
O
60-120
Y
100-200
GR
150-300
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1406
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1406
4
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