SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1411
DESCRIPTION
·With TO-220Fa package
·Low saturation voltage
·Complementary to 2SB1018
APPLICATIONS
·Power amplifier applications
·High current switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Base current
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2.0
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
100
80
5
7
1
30
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=50mA; I
B
=0
I
C
=4A ;I
B
=0.4A
I
C
=4A ;I
B
=0.4A
V
CB
=100V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=1V
I
C
=4A ; V
CE
=1V
V
CE
=4V;I
C
=1A
f=1MHz ; V
CB
=10V;I
E
=0
70
30
MIN
80
2SD1411
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
TYP.
MAX
UNIT
V
0.25
0.9
0.5
1.4
5
5
240
V
V
µA
µA
10
250
MHz
pF
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=0.3A
V
CC
=30V ,R
L
=10A
0.4
2.5
0.5
µs
µs
µs
h
FE-1
Classifications
O
70-140
Y
120-240
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1411
Fig.2 Outline dimensions(unindicated tolerance: ±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1411
4
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