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2SD1414

Description
Silicon NPN Power Transistors
File Size122KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
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2SD1414 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD525
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SB595
・High
breakdown voltage :V
CEO
=100V
・Low
collector saturation volage
: V
CE(sat)
=2.0V(Max)
APPLICATIONS
・Power
amplifier applications
・Recommend
for 30W high fidelity
audio frequency amplifier output stage
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
DESCRIPTION
Absolute maximum ratings(Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
固电
Emitter
导½
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
HAN
INC
PARAMETER
SEM
GE
Open emitter
Open base
Open collector
ON
IC
OR
DUT
VALUE
100
100
5
5
-5
UNIT
V
V
V
A
A
W
CONDITIONS
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
40
150
-55~150

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