SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1417
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1022
·DARLINGTON
APPLICATIONS
·Power amplifier and switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Base current
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2.0
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
60
60
5
7
0.2
30
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=50mA; I
B
=0
I
C
=3A ;I
B
=6mA
I
C
=7A ;I
B
=14mA
I
C
=3A ;I
B
=6mA
V
CB
=60V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=3V
I
C
=7A ; V
CE
=3V
2000
1000
MIN
60
2SD1417
SYMBOL
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
0.9
1.2
1.5
1.5
2.0
2.5
100
3.0
15000
V
V
V
µA
mA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=6mA
V
CC
A45V
,R
L
=15B
0.8
3.0
2.5
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1417
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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