SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1425
DESCRIPTION
·With TO-3PH package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Designed for use in color TV deflection
circuits
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PH) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
5
2.5
1.0
80
150
-55~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction case
MAX
1.56
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
DC current gain
Transition freuqency
Output capacitance
Diode forward voltage
Fall time
CONDITIONS
I
E
=200mA; I
C
=0
I
C
=2A; I
B
=0.6A
I
C
=2A; I
B
=0.6A
V
CB
=500V; I
E
=0
I
C
=0.5A ; V
CE
=5V
I
C
=0.1A ; V
CE
=10V;f=1MHz
I
E
=0 ; V
CB
=10V;f=1.0MHz
I
F
=2.5A
I
C
=2A;I
B1
=0.6A
8
MIN
5
2SD1425
SYMBOL
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE
f
T
C
OB
V
F
t
f
TYP.
MAX
UNIT
V
8.0
1.5
10
V
V
µA
3
95
2.0
1.0
MHz
pF
V
µs
2
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