SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·High speed switching
·High collector current
·Complement to type 2SB953/953A
APPLICATIONS
·Power amplifiers
·Low voltage switching
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
2SD1444 2SD1444A
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
PARAMETER
2SD1444
V
CBO
Collector-base voltage
2SD1444A
2SD1444
V
CEO
Collector-emitter voltage
2SD1444A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current (DC)
Collector current-peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
Open collector
Open base
40
5
7
12
30
W
V
A
A
Open emitter
50
20
V
CONDITIONS
VALUE
40
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SD1444
I
C
=10mA , I
B
=0
2SD1444A
I
C
=5A; I
B
=0.16A
I
C
=5A; I
B
=0.16A
V
CB
=40V; I
E
=0
CONDITIONS
2SD1444 2SD1444A
SYMBOL
MIN
20
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
40
0.6
1.5
V
V
V
CEsat
V
BEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SD1444
2SD1444A
I
CBO
Collector
cut-off current
50
V
CB
=50V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=2V
I
C
=2A ; V
CE
=2V
I
C
=0.5A ; V
CE
=10V
I
E
=0 ; V
CB
=10V;f=1MHz
45
60
150
110
260
50
µA
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
µA
MHz
pF
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=2A; I
B1
=-I
B2
=66mA
0.3
0.3
0.1
µs
µs
µs
h
FE-2
Classifications
R
60-120
Q
90-180
P
130-260
2
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