SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1451
DESCRIPTION
·With TO-3PN package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Emitter-base voltage
Collector current (DC)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open collector
VALUE
1500
6
1.5
50
150
-45~150
UNIT
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
DC current gain
Diode forward voltage
CONDITIONS
I
E
=200mA; I
C
=0
I
C
=1.2A; I
B
=0.3A
I
C
=1.2A; I
B
=0.3A
V
CB
=1500V; I
E
=0
I
C
=0.3A ; V
CE
=5V
I
F
=1.5A
6
MIN
6
2SD1451
SYMBOL
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE
V
F
TYP.
MAX
UNIT
V
5.0
1.5
0.5
V
V
mA
2.2
V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1451
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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