SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1499
·
DESCRIPTION
·With TO-220Fa package
·High transition frequency
·Complement to type 2SB1063
·Wide area of safe operation
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
40
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
100
5
5
8
2.0
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=30mA; I
B
=0
I
C
=3A; I
B
=0.3A
I
C
=3A ; V
CE
=5V
V
CB
=100V; I
E
=0
V
EB
=3V; I
C
=0
I
C
=20mA ; V
CE
=5V
I
C
=1A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=0.5A; V
CE
=5V
f=1MHz ; V
CB
=10V
20
40
20
MIN
100
2SD1499
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
OB
TYP.
MAX
UNIT
V
2.0
1.8
50
50
V
V
µA
µA
200
20
170
MHz
pF
h
FE-2
Classifications
R
40-80
Q
60-120
P
100-200
2
京公网安备 11010802033920号
EEWORLD
