SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1506
DESCRIPTION
·With TO-126 package
·Complement to type 2SB1065
·Low collector saturation voltage
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
1.2
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
60
50
5
3
4.5
10
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=1mA ,I
B
=0
I
C
=50µA ,I
E
=0
I
E
=50µA ,I
C
=0
I
C
=2A; I
B
=0.2A
I
C
=2A; I
B
=0.2A
V
CB
=40V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=0.5A ; V
CE
=3V
I
E
=0 ; V
CB
=10V,f=1MHz
I
C
=0.5A ; V
CE
=5V
56
MIN
50
60
5
2SD1506
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
TYP.
MAX
UNIT
V
V
V
1.0
1.5
1.0
1.0
390
40
90
V
V
µA
µA
pF
MHz
h
FE
Classifications
N
56-120
P
82-180
Q
120-270
R
180-390
2