SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1553
DESCRIPTION
·With TO-3P(H)IS package
·Built-in
damper diode
·High
voltage ,high speed
·Low
collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
5
2.5
1
40
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SD1553
SYMBOL
TYP.
MAX
UNIT
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=200mA , I
C
=0
5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=2A; I
B
=0.6A
5.0
8.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=2A; I
B
=0.6A
1.5
V
I
CBO
Collector cut-off current
V
CB
=500V; I
E
=0
10
µA
h
FE
DC current gain
I
C
=0.5A ; V
CE
=5V
8
f
T
Transition frequency
I
C
=0.1A ; V
CE
=10V
3
MHz
C
OB
Collector output capacitance
I
E
=0 ; V
CB
=10V;f=1MHz
95
pF
V
F
Diode forward voltage
I
F
=2.5A
1.6
2.0
V
t
f
Fall time
I
CP
=2A ;I
B1
(end)
=0.6A
0.5
1.0
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1553
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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