SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1562 2SD1562A
DESCRIPTION
·With TO-220C package
·Complement to type 2SB1085/1085A
·High transition frequency
APPLICATIONS
·For low freuqency power amplifier
applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
2SD1562
V
CBO
Collector-base voltage
2SD1562A
2SD1562
V
CEO
Collector-emitter voltage
2SD1562A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
1.5
150
-55~150
Open collector
Open base
160
5
1.5
3.0
20
W
V
A
A
Open emitter
160
120
V
CONDITIONS
VALUE
120
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SD1562
I
C
=1mA; I
B
=0
2SD1562A
2SD1562
I
C
=50µA; I
E
=0
2SD1562A
I
E
=50µA; I
C
=0
I
C
=1 A;I
B
=0.1 A
I
C
=1 A;I
B
=0.1 A
V
CB
=120V; I
E
=0
V
EB
=4V; I
C
=0
2SD1562
h
FE
DC current gain
2SD1562A
f
T
C
OB
Transition frequency
Output capacitance
I
E
=-0.1A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=0.1A ; V
CE
=5V
CONDITIONS
2SD1562 2SD1562A
SYMBOL
MIN
120
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
160
120
V
160
5
2.0
1.5
1.0
1.0
60
60
80
20
320
200
MHz
pF
V
V
V
µA
µA
V
(BR)CBO
Collector-base
breakdown voltage
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on saturation voltage
Collector cut-off current
Emitter cut-off current
h
FE
classifications
TYPE
2SD1562
2SD1562A
D
60-120
60-120
E
100-200
100-200
F
160-320
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1562 2SD1562A
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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