SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1585
DESCRIPTION
·With TO-220Fa package
·V
CEO
60V;V
EBO
7V;I
C(DC)
3.0A
·Complement to type 2SB1094
APPLICATIONS
·For use in audio frequency power amplifier
and general purpose applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
15
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
60
60
7
3
5
0.6
2.0
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=30mA; I
B
=0
I
C
=2A; I
B
=0.2A
I
C
=2A ;I
B
=0.2A
V
CB
=60V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=50mA ; V
CE
=5V
I
C
=0.5A ; V
CE
=5V
I
C
=0.1A; V
CE
=5V
f=1MHz ; V
CB
=10V
20
40
MIN
60
2SD1585
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
TYP.
MAX
UNIT
V
1.5
2.0
10
10
V
V
µA
µA
200
16
48
MHz
pF
h
FE-2
Classifications
M
40-80
L
60-120
K
100-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1585
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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