SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1632
DESCRIPTION
·With TO-3PFa package
·High voltage ,high speed
·Built-in damper diode
·Wide area of safe operation
APPLICATIONS
·For horizontal deflection output applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
EBO
I
C
I
CM
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open collector
VALUE
1500
5
4
15
3.5
70
130
-55~130
UNIT
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1632
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
SYMBOL
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=500mA ;I
C
=0
5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=3A ;I
B
=1A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=3A ;I
B
=1A
1.5
V
V
CB
=750V; I
E
=0
I
CBO
Collector cut-off current
V
CB
=1500V; I
E
=0
50
µA
1
mA
h
FE
DC current gain
I
C
=3A ; V
CE
=10V
5
15
V
F
Diode forward voltage
I
C
=-4A
2.2
V
Switching times
t
stg
Storage time
I
C
=3A
I
B
end
=1A;L
Leak
=5µH
4
9
µs
t
f
Fall time
0.8
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1632
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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