SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1634
DESCRIPTION
·With TO-220Fa package
·DARLINGTON
·High speed switching
·Good linearity of h
FE
APPLICATIONS
·Power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current (DC)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
100
7
8
12
0.5
50
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=0.2A , I
B
=0
I
C
=5A; I
B
=5mA
I
C
=5A ;I
B
=5mA
V
CB
=100V;I
E
=0
V
CE
=100V; I
B
=0
V
EB
=7V; I
C
=0
I
C
=5A ; V
CE
=3V
1500
MIN
100
2SD1634
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE
TYP.
MAX
UNIT
V
1.5
2.0
100
100
5
10000
V
V
µA
µA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=8A ;I
B1
=8mA
I
B2
=-8mA; V
CC
=50V
3.0
5.0
3.0
µs
µs
µs
h
FE
Classifications
Q
1500-6000
P
5000-10000
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1634
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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