SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1638
DESCRIPTION
·With TO-126 package
·DARLINGTON
APPLICATIONS
·For low frequency and power
amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
100
5
2
10
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector output capacitance
CONDITIONS
I
C
=25mA; I
B
=0
I
C
=1.0A ;I
B
=1mA
I
C
=1.0A ;I
B
=1mA
V
CE
=100V; I
B
=0
V
CB
=100V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=2V
f=0.1MHz ; V
CB
=10V
1000
MIN
100
2SD1638
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CEO
I
CBO
I
EBO
h
FE
C
OB
TYP.
MAX
UNIT
V
1.5
2.0
0.5
10
3
10000
25
V
V
mA
µA
mA
pF
2
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