SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1677
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·High reliability
·Fast speed
APPLICATIONS
·For TV horizontal output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
100
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
5
2.5
W
UNIT
V
V
V
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=100mA; I
B
=0
I
E
=1mA; I
C
=0
I
C
=4.5A ;I
B
=2A
I
C
=4.5A ;I
B
=2A
V
CB
=800V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=5V
8
MIN
800
6
2SD1677
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
5.0
1.5
10
10
V
V
µA
µA
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1677
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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