SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1711
DESCRIPTION
·With TO-3PML package
·High voltage;high speed
·High reliability
.
·Built-in damper diode
APPLICATIONS
·Ultrahigh-definition CRT display
·Horizontal deflection output applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
5
5
100
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Emitter cut-off current
Collector cut-off current
Collector cut-off current
DC current gain
CONDITIONS
I
C
=100mA;I
B
=0
I
C
=4A;I
B
=0.8 A
I
C
=4A;I
B
=0.8 A
V
EB
=4V; I
C
=0
V
CB
=800V; I
E
=0
V
CE
=1500V; R
BE
=0
I
C
=0.5 A ; V
CE
=5V
10
40
MIN
800
2SD1711
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
EBO
I
CBO
I
CES
h
FE
TYP.
MAX
UNIT
V
5.0
1.5
130
10
1
40
V
V
mA
µA
mA
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1711
Fig.2 Outline dimensions
3
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