SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD985 2SD986
·
DESCRIPTION
·With TO-126 package
·Complement to type 2SB794/795
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
and power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SD985
V
CEO
Collector-emitter voltage
2SD986
V
EBO
I
C
I
CM
I
B
Emitter -base voltage
Collector current
Collector current-Peak
Base current
T
a
=25
P
T
Total power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
10
150
-55~150
Open collector
Open base
80
8
±1.5
±3.0
0.15
1.0
W
V
A
A
A
CONDITIONS
Open emitter
VALUE
150
60
V
UNIT
V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD985 2SD986
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SD985
I
CBO
Collector cut-off current
2SD986
I
EBO
h
FE-1
h
FE-2
Emitter cut-off current
DC current gain
DC current gain
V
CB
=80V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=2V
I
C
=1.0A ; V
CE
=2V
1000
2000
30000
2.0
mA
CONDITIONS
I
C
=1.0A; I
B
=1.0mA
I
C
=1.0A; I
B
=1.0mA
V
CB
=60V; I
E
=0
10
µA
MIN
TYP.
MAX
1.5
2.0
UNIT
V
V
SYMBOL
V
CEsat
V
BEsat
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=1.0A;I
B1
=-I
B2
=1.0mA
V
CC
=50V; R
L
=50B
0.5
1.0
1.0
µs
µs
µs
h
FE-2
Classifications
M
2000-5000
L
4000-10000
K
8000-30000
2
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