SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High power dissipation
APPLICATIONS
·Designed for high voltage inverters,
switching regulators,line operated amplifiers,
and switching power supplies applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6306
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
c
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
250
8
8
4
125
200
-65~200
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=0.1A ; I
B
=0
I
C
=3A; I
B
=0.6A
I
C
=8A; I
B
=2A
I
C
=8A; I
B
=2A
I
C
=3A ; V
CE
=5V
V
CE
=500V; V
BE
=-1.5V
V
CE
=250V; I
B
=0
V
EB
=8V; I
C
=0
I
C
=3A ; V
CE
=5V
I
C
=8A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=0.3A ; V
CE
=10V;f=1MHz
5
15
4
MIN
250
2N6306
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
I
CEV
I
CEO
I
EBO
h
FE-1
h
FE -2
C
OB
f
T
TYP.
MAX
UNIT
V
0.8
5.0
2.3
1.3
0.5
0.5
1.0
75
V
V
V
V
mA
mA
mA
250
pF
MHz
Switching times
t
r
t
s
t
f
Rise time
Storage time
Fall time
V
CC
=125V; I
C
=3.0A; I
B
=0.6A
0.6
1.6
0.4
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6306
Fig.2 Outline dimensions
3
京公网安备 11010802033920号
EEWORLD
