SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain
·Excellent safe operating area
APPLICATIONS
·Designed for high power applications
and switching circuits such as relay
or solenoid drivers, dc to dc converters
or inverters.
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6360
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
120
100
7
12
24
4
150
150
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdwon voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition freuqency
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=6A ;I
B
=0.6A
I
C
=12A; I
B
=2.4A
I
C
=6A ; V
CE
=4V
V
CE
=100V; I
B
=0
V
CE
=120V; V
BE(off)
=1.5V
T
C
=150
V
EB
=7V; I
C
=0
I
C
=6A ; V
CE
=4V
I
C
=12A ; V
CE
=4V
I
C
=1A ; V
CE
=4V
15
5
0.2
MIN
100
TYP.
2N6360
SYMBOL
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BE
I
CEO
I
CEX
I
EBO
h
FE-1
h
FE-2
f
T
MAX
UNIT
V
1.4
4.0
2.2
2.0
2.0
10.0
5.0
V
V
V
mA
mA
mA
MHz
2
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