SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6492
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain
·DARLINGTON
APPLICATIONS
·General-purpose power amplifier and
low frequency swithing applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
55
45
5
15
100
150
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.75
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tm=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
2N6492
SYMBOL
MAX
UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
V
BE
I
CEO
I
CEX
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage
I
C
=0.1 A ;I
B
=0
I
C
=10A ;I
B
=100mA
I
C
=10A ;I
B
=100mA
I
C
=3A ; V
CE
=4V
V
CE
=40V; I
B
=0
V
CE
=55V; V
BE(off)
=-1.5V
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=4V
I
C
=15A ; V
CE
=4V
45
V
Collector-emitter saturation voltage
3.0
V
Base-emitter saturation voltage
4.0
V
Base-emitter on voltage
2.8
V
Collector cut-off current
1.0
mA
Collector cut-off current
0.5
mA
Emitter cut-off current
3.0
mA
DC current gain
500
DC current gain
100
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6492
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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