SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6497
DESCRIPTION
·With TO-220C package
·High breakdown voltage
APPLICATIONS
·Designed for high voltage inverters,
switching regulators and line operated
amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
350
250
6
5
10
2
80
150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
VALUE
1.56
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=25mA ;I
B
=0
I
C
=2.5A; I
B
=0.5A
I
C
=5A ;I
B
=2A
I
C
=2.5A; I
B
=0.5A
I
C
=5A ;I
B
=2A
V
CE
=250V;V
BE
=-1.5V
V
CE
=175V;V
BE
=-1.5V;T
C
=100
V
EB
=6V; I
C
=0
I
C
=2.5A ; V
CE
=10V
I
C
=5A ; V
CE
=10V
I
C
=250mA ; V
CE
=10V;f=1MHz
10
3
5.0
MIN
250
2N6497
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CEX
I
EBO
h
FE-1
h
FE-2
f
T
TYP.
MAX
UNIT
V
1.0
5.0
1.5
2.5
1.0
10
1.0
75
V
V
V
V
mA
mA
Switching times
t
r
t
stg
t
f
Rise time
Storage time
Fall time
I
C
=2.5A, I
B1
=-I
B2
=0.5A
V
CC
=125V
1.0
2.5
1.0
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6497
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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