HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS
| 2N6500 | 2N5869 | 2N5870 | |
|---|---|---|---|
| Description | HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS | 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 | 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| Number of terminals | - | 2 | 2 |
| Transistor polarity | - | NPN | NPN |
| Maximum collector current | - | 5 A | 5 A |
| Maximum Collector-Emitter Voltage | - | 60 V | 60 V |
| state | - | ACTIVE | ACTIVE |
| packaging shape | - | ROUND | ROUND |
| Package Size | - | FLANGE MOUNT | FLANGE MOUNT |
| Terminal form | - | PIN/PEG | PIN/PEG |
| terminal coating | - | TIN LEAD | TIN LEAD |
| Terminal location | - | BOTTOM | BOTTOM |
| Packaging Materials | - | METAL | METAL |
| structure | - | SINGLE | SINGLE |
| Shell connection | - | COLLECTOR | COLLECTOR |
| Number of components | - | 1 | 1 |
| Transistor component materials | - | SILICON | SILICON |
| Transistor type | - | GENERAL PURPOSE POWER | GENERAL PURPOSE POWER |
| Minimum DC amplification factor | - | 20 | 20 |
| Rated crossover frequency | - | 4 MHz | 4 MHz |
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