SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6510
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Low collector saturation voltage
APPLICATIONS
·For use in switching power supply
applications and other inductive
switching circuits
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
250
200
7
7
14
120
150
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.25
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
2N6510
SYMBOL
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A ;I
B
=0
200
V
V
CEsat-1
Collector-emitter saturation voltage
I
C
=3A; I
B
=0.4A
1.0
V
V
CEsat-2
Collector-emitter saturation voltage
I
C
=5A; I
B
=1A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=5A; I
B
=1A
V
CE
=250V; V
BE(off)
=-1.5V
T
C
=100
V
EB
=7V; I
C
=0
1.5
0.1
1.5
0.1
V
I
CES
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE
DC current gain
I
C
=4A ; V
CE
=3V
10
50
f
T
Transition frequency
I
C
=0.5A ; V
CE
=10V
3
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6510
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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