SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage capability
·Fast switching speeds
·Low saturation voltage
APPLICATIONS
·Switcing regulators
·Inverters
·Solenoid and relay drivers
·Deflection circuits
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6654
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
c
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
350
6
20
30
150
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.0
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2N6654
SYMBOL
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A ; I
B
=0
350
V
V
(BR)CBO
Collector-emitter breakdown voltage
I
C
=1mA ; I
E
=0
500
V
V
CEsat-1
Collector-emitter saturation voltage
I
C
=10A; I
B
=2A
1.8
V
V
CEsat-2
Collector-emitter saturation voltage
I
C
=15A; I
B
=3A
2.2
V
V
BEsat
Base-emitter saturation voltage
I
C
=15A; I
B
=3A
V
CE
=500V;V
BE(off)
=-1.5V
T
C
=150
V
EB
=6V; I
C
=0
1.8
0.1
2.0
0.1
V
I
CEV
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE-1
DC current gain
I
C
=1A ; V
CE
=5V
15
50
h
FE -2
DC current gain
I
C
=10A ; V
CE
=15V
10
2
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