SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1444
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For switching and wide-band
amplifier applications.
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
80
60
6
6
1
40
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=30mA ;I
B
=0
I
E
=1mA ;I
C
=0
I
C
=6A; I
B
=1A
I
C
=6A ; V
CE
=4V
V
CB
=80V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=1A ; V
CE
=4V
I
C
=3A ; V
CE
=4V
I
C
=0.5A ; V
CE
=10V
30
15
MIN
60
5
2SC1444
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
TYP.
MAX
UNIT
V
V
1.5
2.0
0.1
0.1
V
V
mA
mA
10
MHz
2
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