SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1469
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·For high voltage ,fast switching
applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
-25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
7
10
4
100
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
VALUE
1.25
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=100mA ; I
B
=0
I
C
=5A; I
B
=1A
I
C
=5A; I
B
=1A
V
CB
=500V; I
E
=0
V
CE
=400V; I
B
=0
V
EB
=7V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
15
8
MIN
400
2SC1469
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
TYP.
MAX
UNIT
V
1.0
2.0
0.1
0.1
0.1
50
V
V
mA
mA
mA
10
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1469
Fig.2 Outline dimensions
3
京公网安备 11010802033920号
EEWORLD
