SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1516
·Wit
DESCRIPTION
With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·For medium power amplifer applicatons
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
35
35
5
1.5
3.0
10
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=25mA ,I
B
=0
I
E
=1mA ,I
C
=0
I
C
=1A; I
B
=0.1A
I
C
=1A; I
B
=0.1A
V
CB
=35V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=2V
I
C
=0.2A ; V
CE
=10V
60
MIN
35
5
2SC1516
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
2.0
1.5
20
20
200
110
V
V
µA
µA
MHz
h
FE
Classifications
B
60-120
C
100-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1516
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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