Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4164
DESCRIPTION
·With
TO-220C package
·High
voltage ,high speed
·Wide
area of safe operation
APPLICATIONS
·For
switching regulator applications
PINNING
PIN
1
2
3
Base
Collector; connected to
mounting base
Emitter
DESCRIPTION
·
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
70
150
-50~150
℃
℃
P
W
≤300μs,duty
cycle≤10%
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
7
12
25
4
1.75
W
UNIT
V
V
V
A
A
A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4164
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
ob
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=10mA ;R
BE
=∞
I
C
=1mA ;I
E
=0
I
E
=1mA; I
C
=0
I
C
=8A; I
B
=1.6A
I
C
=8A; I
B
=1.6A
V
CB
=400V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=1.6A; V
CE
=5V
I
C
=8A; V
CE
=5V
I
C
=10mA; V
CE
=5V
I
C
=1.6A ; V
CE
=10V
f=1MHz ; V
CB
=10V
15
10
10
20
160
MHz
pF
MIN
400
500
7
0.8
1.5
10
10
50
TYP.
MAX
UNIT
V
V
V
V
V
μA
μA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=10A; I
B1
=2A
I
B2
=-4A; V
CC
=200V
R
L
=20Ω
0.5
2.5
0.3
μs
μs
μs
h
FE-1
Classifications
L
15-30
M
20-40
N
30-50
2
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