SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1586
DESCRIPTION
·With TO-3 package
·High power dissipation
·High current capability
APPLICATIONS
·For audio power amplifier and general
purpose applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
250
200
6
15
4
150
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=25mA ;I
B
=0
I
E
=1mA ;I
C
=0
I
C
=5A; I
B
=0.5A
V
CB
=250V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=5A ; V
CE
=4V
I
C
=1A ; V
CE
=12V
I
E
=0 ; V
CB
= 10V; f=1MHz
110
60
MIN
200
6
2SC1586
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
TYP.
MAX
UNIT
V
V
2.0
0.1
0.1
V
mA
mA
10
MHz
pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1586
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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