SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1683
DESCRIPTION
·With TO-220C package
·Complement to type 2SA843
·High breakdown voltage
·Large collector power dissipation
APPLICATIONS
·Audio frequency power amplifier
·Color TV vertical deflection output
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
200
150
5
500
2
20
150
-50~150
UNIT
V
V
V
mA
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=5mA ; I
B
=0
I
C
=0.5mA ; I
E
=0
I
E
=0.5mA ; I
C
=0
I
C
=500mA; I
B
=50mA
I
C
=400m A ; V
CE
=10V
V
CB
=200V ;I
E
=0
V
EB
=4V; I
C
=0
I
C
=400m A ; V
CE
=10V
60
MIN
150
200
5
2SC1683
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
V
1.0
1.0
50
50
200
V
V
µA
µA
h
FE
Classifications
P
60-140
Q
85-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1683
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3