SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1678
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·27MHz RF power amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
I
E
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
65
65
4
3
0.4
-3
10
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
Collectpr output capacitance
Transition frequency
CONDITIONS
I
C
=0.5A; I
B
=50m A
I
C
=1mA; I
E
=0
I
C
=10mA; I
B
=0
I
E
=1mA; I
C
=0
V
CB
=30V;I
E
=0
V
CE
=20V;I
B
=0
I
C
=0.5A ; V
CE
=5V
I
C
=1.5A ; V
CE
=5V
I
E
=0 ; V
CB
=10V, f=1MHz
I
C
=0.1A ; V
CE
=5V
100
15
10
65
65
4
MIN
2SC1678
SYMBOL
V
CE
(sat)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE-1
h
FE-2
C
OB
f
T
TYP.
MAX
1.0
UNIT
V
V
V
V
10
100
µA
µA
30
pF
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1678
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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