SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1722
DESCRIPTION
·With TO-220C package
·High breakdown voltage
·High transition frequency
APPLICATIONS
·Low frequency power amplifier
·TV horizontal/vertical driver
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
12.5
150
-45~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
300
300
5
0.2
1.8
W
UNIT
V
V
V
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=5mA ; R
BE
=;
I
C
=100µA ; I
E
=0
I
E
=100µA ; I
C
=0
I
C
=50mA; I
B
=5mA
I
C
=50m A ; V
CE
=10V
V
CB
=250V ;I
E
=0
V
CE
=250V; R
BE
=;
I
C
=50m A ; V
CE
=10V
I
C
=30m A ; V
CE
=20V
I
E
=0 ; V
CB
=50V; f=1MHz
50
MIN
300
300
5
2SC1722
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
CEO
h
FE
f
T
C
OB
TYP.
MAX
UNIT
V
V
V
1.0
0.68
2.0
0.9
0.1
2
300
V
V
µA
µA
80
4.3
MHz
pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1722
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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