SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SA885
·Low collector saturation
APPLICATIONS
·For medium output power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2SC1846
Absolute Maximun Ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
CONDITIONS
Open emitter
Open base
Open collector
VALUE
45
35
5
1
1.5
1.2*
P
C
Collector power dissipation
T
C
=25
5*
T
j
T
stg
Junction temperature
Storage temperature
2
1
UNIT
V
V
V
A
A
W
150
-55~150
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=2mA;I
B
=0
I
C
=1mA ;I
E
=0
I
C
=0.5A ;I
B
=50mA
V
CB
=20V; I
E
=0
V
CE
=20V; I
B
=0
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=10V
I
C
=1A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=50mA ; V
CB
=10V,f=200MHz
85
50
MIN
35
45
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
2SC1846
TYP.
MAX
UNIT
V
V
0.5
0.1
100
10
340
V
µA
µA
µA
20
200
pF
MHz
h
FE-1
Classifications
Q
85-170
R
120-240
S
170-340
2
京公网安备 11010802033920号
EEWORLD
