Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2238 2SC2238A 2SC2238B
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SA968
・High
breakdown votage
APPLICATIONS
・Power
amplifier applications
・
Driver stage amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
固电
导½
半
V
CBO
HA
INC
Emitter-base voltage
Collector current
Emitter current
Collector-base voltage
ES
NG
2SC2238A
2SC2238B
2SC2238
2SC2238A
2SC2238B
2SC2238
MIC
E
Open emitter
Open base
CONDITIONS
OR
UCT
ND
O
VALUE
160
180
200
160
180
200
UNIT
V
V
CEO
Collector-emitter voltage
V
V
EBO
I
C
I
E
P
T
T
j
T
stg
Open collector
5
1.5
-1.5
V
A
A
W
℃
℃
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
25
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SC2238
V
(BR)CEO
Collector-emitter
breakdown voltage
2SC2238A
2SC2238B
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
C
ob
f
T
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
2SC2238 2SC2238A 2SC2238B
CONDITIONS
MIN
160
TYP.
MAX
UNIT
I
C
=10mA; I
B
=0
180
200
V
I
E
=1mA; I
C
=0
I
C
=500A; I
B
=50mA
I
C
=500mA ; V
CE
=5V
V
CB
=160V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=100mA ; V
CE
=5V
5
1.5
1.0
1.0
1.0
V
V
V
μA
μA
固电
IN
DC current gain
导½
半
Output capacitance
Transition frequency
h
FE
Classifications
O
70-140
Y
ANG
CH
MIC
E SE
I
C
=100mA ; V
CE
=10V
I
E
=0 ; V
CB
=10V,f=1MHz
OR
UCT
ND
O
70
240
25
100
pF
MHz
120-240
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2238 2SC2238A 2SC2238B
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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