SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1863
DESCRIPTION
·With TO-66 package
·Continuous collector current-I
C
=7A
·Power dissipation –P
C
=40W @T
C
=25
APPLICATIONS
·Designed for general-purpose amplifier
and switching applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
150
100
7
7
40
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=100mA ; I
B
=0
I
E
=1mA ; I
C
=0
I
C
=1A ;I
B
=0.1A
I
C
=1A ; V
CE
=2V
V
CB
=150V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=3A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
20
15
MIN
100
7
2SC1863
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
V
0.5
1.0
100
100
V
V
µA
µA
2
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