SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1893
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·For line-operated horizontal deflection
output applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
500
5
3.5
50
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=0.1A ;I
B
=0
I
E
=1mA ;I
C
=0
I
C
=3A; I
B
=0.6A
I
C
=3A; I
B
=0.6A
V
CB
=750V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=0.1A ; V
CE
=10V
I
E
=0; V
CB
=10V;f=1MHz
10
MIN
500
5
2SC1893
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
TYP.
MAX
UNIT
V
V
5.0
1.5
50
50
40
3
95
V
V
µA
µA
MHz
pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1893
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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