SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1905
DESCRIPTION
·With TO-220C package
·High breakdown voltage
·Large collector power dissipation
APPLICATIONS
·Color TV horizontal deflection
driver
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
350
300
7.5
200
400
15
150
-55~150
UNIT
V
V
V
mA
mA
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
Storage time
CONDITIONS
I
C
=5mA ; I
B
=0
I
C
=100µA ; I
E
=0
I
E
=100µA ; I
C
=0
I
C
=50mA; I
B
=5mA
V
CB
=200V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=10m A ; V
CE
=10V
I
C
=10m A ; V
CE
=30V
I
E
=0 ; V
CB
=50V; f=1MHz
I
C
=100mA; I
B1
=10mA; I
B2
=0
5
40
50
MIN
300
350
7.5
2SC1905
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
t
stg
TYP.
MAX
UNIT
V
V
V
1.0
2
2
250
V
µA
µA
MHz
4.5
7.5
pF
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1905
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3