SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2075
DESCRIPTION
·With TO-220 package
·High transition frequency
·Wide area of safe operation
APPLICATIONS
·27MHz power amplifier applications
·Recommended for output stage application
of AM 4W transmitter
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
80
80
4
4
-4
10
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=3A; I
B
=0.3 A
I
C
=10mA; I
B
=0
I
E
=1.0mA; I
C
=0
V
CB
=30V;I
E
=0
V
EB
=4V; I
C
=0
I
C
=0.5A ; V
CE
=5V
I
C
=3A ; V
CE
=2V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=0.5A ; V
CE
=5V
25
15
80
4
MIN
2SC2075
SYMBOL
V
CEsat
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
TYP.
MAX
1.5
UNIT
V
V
V
10
10
µA
µA
40
100
pF
MHz
2
FPGA/CPLD
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