SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD905
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For high voltage power switching TV
horizontal deflection output applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1400
650
5
8
10
50
150
-45~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
2SD905
SYMBOL
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=10mA ;R
BE
=:
650
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=10mA ; I
C
=0
5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=8A;I
B
=1.5A
10
V
V
BEsat
Base-emitter saturation voltage
I
C
=8A;I
B
=1.5A
1.5
V
I
CES
Collector cut-off current
V
CE
=1400V ; R
BE
=0
0.5
mA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
0.5
mA
h
FE
DC current gain
I
C
=1A ; V
CE
=5V
8
36
t
f
Fall time
I
C
=6.8A; I
B1
=1.1A;L
B
=0
1.0
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD905
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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