SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2167
DESCRIPTION
·With TO-220 package
·High collector-emitter breakdown voltage
:
V
CEO
=150V(min)
APPLICATIONS
·Power amplifier applications
·TV vertical deflection applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
150
150
6
2
3
30
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=25mA ;I
B
=0
I
C
=0.5mA ;I
E
=0
I
E
=0.5mA ;I
C
=0
I
C
=0.5A ;I
B
=50m A
V
CB
=150V;I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=0.1A ; V
CE
=10V
50
MIN
150
150
6
2SC2167
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
V
1.0
10
10
V
µA
µA
20
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2167
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3