SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SA963
·High collector power dissipation
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2SC2209
Absolute Maximun Ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
50
40
5
1.5
3
10
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=2mA;I
B
=0
I
C
=1mA ;I
E
=0
I
C
=1.5A ;I
B
=150mA
I
C
=2A ;I
B
=0.2A
V
CB
=20V; I
E
=0
V
CE
=10V; I
B
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
E
=0 ; V
CB
=5V;f=1MHz
I
C
=0.5A ; V
CB
=5V,f=200MHz
80
MIN
40
50
2SC2209
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE
C
OB
f
T
TYP.
MAX
UNIT
V
V
1.0
1.5
1
100
10
220
50
150
V
V
µA
µA
µA
pF
MHz
h
FE
Classifications
Q
80-160
R
120-220
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2209
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2209
4