Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1426
DESCRIPTION
·With
TO-3P(H)1S package
·Built-in
damper diode
·High
voltage ,high speed
·Low
collector saturation voltage
APPLICATIONS
·Designed
for use in color TV deflection
circuits
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
DESCRIPTION
Absolute maximum ratings (T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
5
3.5
1.0
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction case
MAX
1.56
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD1426
TYP.
MAX
UNIT
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=200mA; I
C
=0
5
V
V
CE(sat)
V
BE(sat)
Collector-emitter saturation voltage
I
C
=3A; I
B
=0.8A
I
C
=3A; I
B
=0.8A
8.0
V
Base-emitter saturation voltage
1.5
V
μA
I
CBO
Collector cut-off current
V
CB
=500V; I
E
=0
10
h
FE
DC current gain
I
C
=0.5A ; V
CE
=5V
8
f
T
Transition freuqency
I
C
=0.1A ; V
CE
=10V;f=1MHz
3
MHz
C
OB
Output capacitance
I
E
=0 ; V
CB
=10V;f=1.0MHz
95
pF
V
F
t
f
Diode forward voltage
I
F
=3.5A
I
C
=3A;I
B1
=0.8A
2.0
V
μs
Fall time
1.0
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1426
Fig.2 outline dimensions (unindicated tolerance:±0.15 mm)
3
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