SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2275 2SC2275A
DESCRIPTION
·With TO-220 package
·Complement to type 2SA985/985A
·High breakdown voltage
APPLICATIONS
·For low frequency and high frequency
power amplifer applicatons
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
PARAMETER
2SC2275
V
CBO
Collector-base voltage
2SC2275A
2SC2275
V
CEO
Collector-emitter voltage
2SC2275A
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
150
5
1.5
3.0
0.3
25
150
-55~150
V
A
A
A
W
Open emitter
150
120
V
CONDITIONS
VALUE
120
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
2SC2275 2SC2275A
SYMBOL
MIN
TYP.
MAX
UNIT
2SC2275
V
(BR)CEO
Collector-emitter
breakdown voltage
2SC2275A
I
C
=25mA ,I
B
=0
120
V
150
V
CEsat
Collector-emitter saturation voltage
I
C
=1A; I
B
=0.1A
2.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=1A; I
B
=0.1A
1.5
V
I
CBO
Collector cut-off current
V
CB
=120V; I
E
=0
1.0
µA
I
EBO
Emitter cut-off current
V
EB
=3V; I
C
=0
1.0
µA
h
FE-1
DC current gain
I
C
=5mA ; V
CE
=5V
35
h
FE-2
DC current gain
I
C
=0.3A ; V
CE
=5V
60
150
320
C
OB
Output capacitance
I
E
=0 ; V
CB
=10V,f=1MHz
19
pF
f
T
Transition frequency
I
C
=0.2A ; V
CE
=5V
200
MHz
h
FE-2
Classifications
R
60-120
Q
100-200
P
160-320
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2275 2SC2275A
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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